fig4

Direct Z-scheme siloxene germanane nanosheet heterojunctions for broadband photodetection and ultrasensitive photoelectrochemical sensing

Figure 4. (A) Photoresponse behavior of SiNSs, GeNSs, and nanocomposites of H1, H2, and H3 under a 300 W xenon lamp irradiation at a bias voltage of 0.6 V; (B) Electrochemical impedance spectra (EIS) of SiNSs, GeNSs, H1, H2, and H3; (C) photoluminescence (PL) spectra of SiNSs, GeNSs, H1, H2, and H3. (D-I) Wavelength-dependent photoresponse of (D) SiNSs, (E) H1, (F) H2, (G) H3, and (H) GeNSs at Level III at a bias voltage of 0.6 V. (I) Photocurrent densities and photoresponsivities of SiNSs, H1, H2, H3, and GeNSs-PDs under various monochromatic light wavelengths at Level III under a bias potential of 0.6 V.

Microstructures
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